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Other articles related with "total ionizing dose (TID)"：
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68502 |
Rongxing Cao(曹荣幸), Kejia Wang(汪柯佳), Yang Meng(孟洋), Linhuan Li(李林欢), Lin Zhao(赵琳), Dan Han(韩丹), Yang Liu(刘洋), Shu Zheng(郑澍), Hongxia Li(李红霞), Yuqi Jiang(蒋煜琪), Xianghua Zeng(曾祥华), and Yuxiong Xue(薛玉雄) |
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Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs |
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Chin. Phys. B
2023 Vol.32 (6): 68502-068502
[Abstract]
(173)
[HTML 0 KB]
[PDF 1436 KB]
(78)
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128501 |
Xin Xie(解鑫), Da-Wei Bi(毕大伟), Zhi-Yuan Hu(胡志远), Hui-Long Zhu(朱慧龙), Meng-Ying Zhang(张梦映), Zheng-Xuan Zhang(张正选), Shi-Chang Zou(邹世昌) |
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Influence of characteristics' measurement sequence on total ionizing dose effect in PDSOI nMOSFET |
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Chin. Phys. B
2018 Vol.27 (12): 128501-128501
[Abstract]
(613)
[HTML 1 KB]
[PDF 1013 KB]
(142)
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36103 |
Shuang Fan(樊双), Zhi-Yuan Hu(胡志远), Zheng-Xuan Zhang(张正选), Bing-Xu Ning(宁冰旭), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Meng-Ying Zhang(张梦映), Le-Qing Zhang(张乐情) |
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Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs |
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Chin. Phys. B
2017 Vol.26 (3): 36103-036103
[Abstract]
(662)
[HTML 1 KB]
[PDF 721 KB]
(419)
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96110 |
Lili Ding(丁李利), Simone Gerardin, Marta Bagatin, Dario Bisello, Serena Mattiazzo, Alessandro Paccagnella |
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Comparison of radiation degradation induced by x-rayand 3-MeV protons in 65-nm CMOS transistors |
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Chin. Phys. B
2016 Vol.25 (9): 96110-096110
[Abstract]
(779)
[HTML 1 KB]
[PDF 251 KB]
(325)
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